QBT-A High Vacuum Plasma-enhanced ALD System
Product Overview
QBT-A High Vacuum Plasma Enhanced Atomic Layer Deposition System by Yunmao Technology is the first HV-PEALD equipment suitable for high-end R&D and manufacturing in China. It is primarily used for depositing high-quality ALD thin films (oxides, nitrides, metallic elements). Its high-vacuum design reduces system leakage rates and features an oxygen-free ceramic plasma generator, gas passivator, and four dual-tube source bottles. It enables ultra-low RF circuit loss, high-aspect-ratio TSV filling, and ultra-low oxygen content.
Technical Advantages
Ultimate Pressure: <5E-8Torr
Plasma: 600W max. RF auto-matching power supply
Max Wafer Size: Ф200mm, AL2O3 Uniformity<1%
Wafer Heating: RT-500±1oC
Max Precursor: Up to 3 plasma reactive gases and 4 liquid/solid precursor sources
Ozone Generator: Configurable, production rate: 15 g/h
