QBT-P Dual-chamber Ultra-high Vacuum Magnetron Sputtering System
Product Overview
QBT-P enables high-quality thin-film deposition and can grow high-purity α-phase tantalum films at both high and room temperatures. It deposited α-Ta films exhibit superior superconducting properties with Tc > 4.25 K and residual resistance ratio > 6, enabling low-loss quantum circuits that achieve single-photon Q > 10? and qubit coherence times exceeding 250 μs.
Technical Advantages
Wafer Heating: RT-900oC
Sample Size: Max 12 inch Wafer and smaller chips compatible
Wafer Transfer: Highly reliable and repeatable substrate transferring capability
UHV Chamber: 2 UHV Chambers, Loadlock and Sputtering
Ultimate Pressure: <3E-9Torr
Pumping Spead: From ATM to 1E-7Torr<20min (loadlock)
Sputtering: DC or RF power supply, wafer and target space can change continoulsly
Ion Milling: Kaufman Ion Source, Ion Energy 100-600eV, 100-1200eV; Ion Beam Current: 20-200mA, Etching uniformity <±6% on ?100 mm substrates
HMI: Fully Automated Human-Machine Interface
