QBT-P L3Triple-chamber Ultra-high Vacuum Magnetron Sputtering System(α-Ta、Nb-Ta)
Product Overview
QBT-P L3 includes three process chambers. Compared to QBT-P, one more sputtering chamber is included enabling multi-layer structures, such as Nb/Al-AlOx/Nb, Al/AlOx/Al, or even α-Ta/TaOx/α-Ta junctions. The system is also compatible with seed layer based process.
Technical Advantages
UHV Chamber: Multiple chambers, including Loadlock and Sputtering
Ultimate Pressure: <3E-9Torr
Wafer Heating: RT-900oC
HMI: Fully Automated Human-Machine Interface
Sample Size: Max 6 inch Wafer and smaller chips compatible
Wafer Transfer: Highly reliable and repeatable substrate transferring capability
Pumping Spead: From ATM to 1E-7Torr<20min (loadlock)
Uniformity: Sheet Resistance Uniformity 1 Sigma NU%<±5% (4 inch wafer with 5 mm removal from the edge)
Sputtering: DC or RF power supply, wafer and target space can change continoulsly
